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prof Toru Ujihara

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Affiliation:


Department of Materials Science and Engineering, Nagoya University

address: Furo-cho, Chikusaku, Nagoya, 464-8603, Japan
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Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Ultra-high quality SiC crystal grown by solution method utilizing the conversion from threading dislocations to basal plane defects

Publications:


  1. Effect of solution flow velocity on the step bunching in solution growth of SiC
  2. Evolution of threading screw dislocation conversion during solution growth of 4H-SiC
  3. Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers
  4. Growth of high quality 3C-SiC on hexagonal SiC seed using TSSG method
  5. Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C based solutions under various temperature gradient conditions
  6. Two-dimensional crystallization of DNA-functionalized nanoparticles via lipid diffusion in supported lipid bilayers
  7. Two Pathways Determining Chirality in NaClO3 Crystals Grown from Solution via Achiral Precursors
  8. Ultra-high quality SiC crystal grown by solution method utilizing the conversion from threading dislocations to basal plane defects



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