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prof Toru Ujihara
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Affiliation:
Department of Materials Science and Engineering, Nagoya University
address:
Furo-cho, Chikusaku, Nagoya, 464-8603,
Japan
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Participant:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
began:
2013-08-11
ended:
2013-08-16
Presented:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Ultra-high quality SiC crystal grown by solution method utilizing the conversion from threading dislocations to basal plane defects
Publications:
Effect of solution flow velocity on the step bunching in solution growth of SiC
Evolution of threading screw dislocation conversion during solution growth of 4H-SiC
Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers
Growth of high quality 3C-SiC on hexagonal SiC seed using TSSG method
Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C based solutions under various temperature gradient conditions
Two-dimensional crystallization of DNA-functionalized nanoparticles via lipid diffusion in supported lipid bilayers
Two Pathways Determining Chirality in NaClO
3
Crystals Grown from Solution via Achiral Precursors
Ultra-high quality SiC crystal grown by solution method utilizing the conversion from threading dislocations to basal plane defects
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