In designing of solar cells structures the main emphasis is placed on improving the conversion efficiency. Various methods could be applied in order to enhance performance of device. Theoretical investigation and experimental examination of heterostructure Al_xGa_1-xAs/GaAs solar cell were carried out. Modelling of consequences of GaAs quantum wells application in ordinary Al_xGa_1-xAs/GaAs p-i-n solar cell device were determined. SimWindows version 1.5.0 made by David W. Winston was used to simulate devices under not concentrated AM 1.5 spectrum with P_in in average equal to 1000 W/m².

Heterostructures were placed within intrinsic region. Solar cell structure was optimized. Optimization of well and barrier width, well depth with constant value of intrinsic region width, number of wells in the intrinsic region, doping concentration of n region, width and doping concentration of p region was carried out. The depth of wells was altered by changing the fraction of Al in Al_xGa_1-xAs barrier material. Results of modelling were compared with identical p-i-n solar cells without quantum wells.

AP-MOVPE technology was applied in order to fabricate solar cell device. Various measurements of structure as-growth were carried out. Electrical parameters and spectral characteristic of device were marked. I-V dark and illuminated solar cell plots were measured.

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