In_yGa_1-yAs_1-xN_x semiconductor alloys, so called dilute nitrides were proposed in nineties by Weyers[1] and Kondow[2] as new materials for laser diodes emitting at telecommunication wavelengths. Both indium and nitrogen introduced to GaAs matrix reduces the band gap energy of In_yGa_1-yAs_1-xN_x compound. Presence of indium in this alloy increases the lattice parameter of InGaAs while addition of nitrogendecreases the lattice parameter of GaAsN, so for In_yGa_1-yAs_1-xN_x quaternary alloys it is possible to obtain material lattice-matched to GaAs, Ge, AlAs, In_0.5Ga_0.5P (y~3x) with the band gap about 1 eV. Beside of lasers application dilute nitrides are very attractive material for photodetectors [3] and high efficient multijunction solar cells [4].

In this work we present the photoluminescence of In_yGa_1-yAs_1-xN_x/GaAs multiple quantum well (MQW) for as grown structures and annealed at 700˚C in nitrogen ambient. The influence of time of thermal annealing on optical properties of the obtained MQW structures is discussed. Moreover, we present results of annealing on three different MQW structures (InGaAs/GaAs, GaAsN/GaAs and InGaAsN/GaAs) grown at the same technological conditions to investigate an influence of incorporation a small amount of nitrogen into the classical AIIIBV semiconductor compounds on their photoluminescence spectra. Blue and redshift effects were observed as a result of thermal treatment.

Acknowledgments:

This work was co-financed by Polish Ministry of Science and Higher Education under the grant no. N N515 607539, by the European Union within European Regional Development Fund, through grant Innovative Economy (POIG.01.01.02-00-008/08-05), by Wroclaw University of Technology statutory grant. In addition, W.D. acknowledges the financial support from the European Union within European Social Fund.

References:

[1] Weyers, M., Sato, M., Ando, H., " Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers," Jpn. J. Appl. Phys 31(7A), L853-L855 (1992).

[2] Kondow, M., et al., " GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance" Jpn. J. Appl. Phys 35(2B), 1273-1275 (1996).

[3] Han, Q., et al., “1.55μm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs” Appl. Phys. Lett. 87(11), 111105-111107 (2005).

[4] Kurtz S., et at., " InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs" Appl. Phys. Lett. 74(5), 729-731 (1999).

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