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Alexander K. Fedotov 1Svetlana P. Kobeleva 2Sergyei I. Tyutyunnikov 3Serguei V. Chigir 1Olga V. Zinchuk 1Alexander V. Mazanik 1Nikolai A. Drozdov 1Yuri S. Kovalev 3V A. Yakovlev 4

1. Belarusian State University (BSU), F. Skaryna av. 4, Minsk 220050, Belarus
2. Moscow State Steal & Alloys Institute, Moscow 117936, Russian Federation
3. Joint Institute for Nuclear Research, Dubna, Russian Federation
4. Institute of Spectroscopy RAS, Troitzk, Russian Federation


The samples of p-type (100) Cz-Si cut from wafers covered with 1 to 2 nm thick native oxide were subjected to the treatment in low-energy DC hydrogen plasma at room temperature with ions energy in the range of 100 - 800 eV.
The experiments have shown that hydrogen ion-beam treatment leads to a significant changes in native oxide state and properties of under-surface region of the samples studied.
In particular, the mean lifetime, diffusion lengthof minority charge carriers and surface conductance decreased by a factor equal to 1.5-2 even after 5 min treatment, whereas the further increase of introduced hydrogen dose didn’t result to significant variation of them. Moreover, all hydrogenated wafers displayed the appearance of photo-EMF recorded without p-n junction or Schottky barrier formation that testifies energy band bending taking place in the under-surface layer of hydrogenated samples.
AFM measurements have shown that hydrogenation always transforms the nano-smooth wafers into nano-structured patterns after first 5 min of hydrogenation. The further increase of exposure time up to 40 min resulted only to the surface evening-out and decrease of AFM-roughness again. XPS and IR measurements have exhibited that nanostructuring after 5 min hydrogenation resulted in reduction of native SiO2 whereas the following flattening of the surface after 40 min exposure was accompanied by the intensive growth of oxide thickness (up to 7-8 nm) stimulated by atomized hydrogen. The measured Raman spectra have exhibited the increase (proportionate to exposure time) of long-wave wing for the basic silicon line (520 1/см) after hydrogenation that can be interpreted as formation of amorphous-like layer between oxide and monocrystalline wafer.


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Presentation: oral at E-MRS Fall Meeting 2004, Symposium A, by Alexander K. Fedotov
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-05-10 17:36
Revised:   2009-06-08 12:55