The main goal of this work was to investigate the possibility for manufacturing of nanocrystalline CdSxSe1-x films to improve their homogeneity and the properties reproducibility. In these experiments the n-type 'CdS₀.2Se₀.8' films of 0.50-0.65 μ\m thick were RF sputtered onto glass substrates that were covered with the layer of the unreduced (Type 1) or reduced (Type 2) silver. To compare with previous results concerning microerystalline films, some of samples were prepared simultaneously and at the same regimes using sputtering onto substrates from aluminium oxide ceramics (Type 3). The structural characterization (SEM, AFM, Raman) have shown strong influence of substrate type and duration of recrystallization on structure and roughness of the films studied. The films sputtered onto type 1 and 2 substrates resulted in formation of nanosize grain structure in contrast to 2-3 μ\m grains for the Type 3 films. Besides the the least roughness (100-120 nm) was exhibited for the films sputtered onto smooth substrates (alumina ceramics and glass covered with unreduced silver sublayer) whereas the roughness of the films deposited onto glass covered with island-like reduced silver was 2-3 times higher. Raman measurements denote some homogenization of the films with the increase of recrystallization time. Electrical measurements (dark and light I-V characteristics, spectral response, surface potential induced by electron beeam in SEM, etc.) have shown their strong sensivity to the state of substrate silver sublayer, grain sizes and tyme of the film recrystallization. It was shown, in particular, that recrystallization of the films sputtered onto glass substrates covered with silver islands with nanosized grain structure (type 2) were characterized by the best photosensivity as compared with the films deposited onto aluminium oxide ceramics (Type 3) or glass substrates covered with continuous sublayer of unreduced silver (Type 1).

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