We carried out thorough investigation of the co-firing profiles of the screen printed single and multicrystalline silicon wafer surfaces (front and back) in Rapid Thermal Processing (RTP) furnace for the formation of metal contact. The firing profiles and the performance parameters of the cells were analysed for wafers of different sheet resistances such as 20, 30, 40, 60 and 80 ohm per square. The Phosphorous doping for the generation of emitter layers of different sheet resistances was done by high temperature diffusion using POCL3.The sheet resistance was measured using four point probe device and metal thickness on the front and back surfaces after co-firing were obtained by using a- step measurement technique. On the best textured and silicon nitride deposited surface a conversion efficiency of 17 % and 14 % could be ensured in the single crystalline and multicrystalline silicon solar cells respectively, fabricated by using our optimized co-firing approach after front and back metal printing. This approach could be used for industrial production of low cost and high efficiency silicon solar cells of large area.

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