We applied Spin- On - Doping (SOD) method to form emitter layer on the p-type multicrystalline silicon wafers. A stable and consistent sheet resistance of ~ 40 ohms per square was obtained in all the doped wafers. Solar cells were fabricated with those wafers using the main steps such as PECVD silicon nitride deposition for antireflection coating and front surface passivation, screen printing metallization on front and back surfaces, co-firing in rapid thermal processing furnace and finally the edge isolation by using Nd-YAG laser. SEM (EBIC) and ASR were used to examine the p-n junction profile of the wafers. Solar cells with at least 13 % conversion efficiency could be fabricated as the end product by this method.

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