Sm-doped BiFeO₃ have been prepared by a modified solid-state-reaction method, of which a much faster heating and cooling rates during the sintering stage were employed. The doping level was from 1mol%, 3mol%, 5mol%, to 8mol%. Different processing parameters, such as sintering temperature and annealing temperature, have been optimized to get high quality samples. Based on the results from the dielectric loss studies, the optimum sintering and annealing temperatures were found to be 825^oC and 300^oC respectively. With increasing Sm doping level, the dielectric loss was increased, probably due to the larger number of pores, as observed by the scanning electron microscopy. Leakage-free P-E hysteresis loops in square shape were observed in all samples. The remnant polarization (Pr) was maximized in the 5mol%-doped sample, which showed a Pr value of as high as 35uC/cm². Furthermore, remnant magnetization was observed after Sm doping and the 8mol%-doped sample possessed the largest remnant magnetization of 0.007emu/g. On the basis of our studies, the modified solid-state-reaction method was proved to be an effective method for the preparation of high quality BFO ceramics and the Sm dopant can greatly improve the ferroelectric and magnetic properties.

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