In-doped n-type semi-conducting Magnesium Zinc Oxide (MZO) thin films have been fabricated on MgO (100) and LaAlO₃ (LAO) (100) substrates under low oxygen ambient pressure by Pulse Laser Deposition (PLD). X-ray diffraction and TEM studies reveal the presence of pure phase cubic MZO (c-MZO). High quality cube-on-cube epitaxy is obtained in films grown on MgO. For films deposit on LAO, they exhibit heteroepitaxial relationship of (100)_c-MZO||(100)_LAO and (011)_c-MZO||(010)_LAO. All as-prepared c-MZO thin films show good optical transmittance over the whole visible spectrum. Samples with In dopant concentration above 8 at. % yield an electrical resistivity of less than 10^-2Ωcm and can be used as Transparent Conducing Oxide (TCO) thin films.

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