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Electrodeposed CuIn(S,Se)2 based solar cells: electrical properties

Arouna Darga 1Denis Mencaraglia 1Anne migan Dubois 1Zakaria Djebbour 1Jean-Francois Guillemoles 2James P. Connolly 2Veronica Bermudez 2Daniel Lincot 3

1. Laboratoire de Génie Electrique de Paris (LGEP), Plateau de moulon 11, rue Joliot Curie, Gif-sur-Yvette 91192, France
2. Institut de Recherche et Développement en Energie Photovoltaique, unité mixte EDF-CNRS-ENSCP (IRDEP), 6 quai Watier, Paris 78401, France
3. Ecole Nationale Supérieure de chimie de Paris (ENSCP), 11 rue P. et M. Curie, Paris 75005, France


The effects of the Cadmium Sulphide (CdS) buffer layer thickness (db) on the electrodeposited CuIn(S,Se)2 (e-CISSe)/CdS heterojunction properties are investigated. For this purpose, five samples of e-CISSe/CdS solar cells, with different buffer layer thicknesses ranging from 25nm to 63nm have been studied using current-voltage characteristics measurements as a function of the temperature (I (V, T)) and admittance spectroscopy (C(w,T)). For all devices, admittance spectroscopy reveals two relative shallow defect levels located at 0.1eV and 0.2eV, respectively. From the Meyer-Neldel behaviour observed on the pre-exponential factor of defects emission frequencies; we observed that the electronic properties of defects such as capture cross section are not dependent on the buffer layer thickness. In addition, analysis of the I (V, T) characteristics reveals blocking current-voltage behaviour as an abnormal serial resistance at high forward bias voltage. All samples show this abnormal serial resistance which is characterized by activation energy of 0.2eV. In this contribution we discuss the C(w,T) and I(V,T) results in order to give an insight about electrical properties of e-CISSe based solar cells.


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Presentation: Poster at E-MRS Fall Meeting 2007, Symposium B, by Arouna Darga
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-21 10:18
Revised:   2009-06-07 00:44