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Electrochemical mechanistic study of ZnO Nanowires Growth by Electrodeposition Inside Alumina Templates

Daniel L. Ramirez 1Thierry Pauporte 1Humberto Gómez 2Daniel Lincot 1

1. Ecole Nationale Supérieure de chimie de Paris (ENSCP), 11 rue P. et M. Curie, Paris 75005, France
2. Pontificia Universidad Católica de Valparaíso (PUCV), Avda Brasil 2950, Valparaíso Chile, Valparaíso xxxx, Chile


Zinc oxide nanowires (ZnO NWs) made by potentiostatic electrodeposition (ED) inside both anodic alumina membranes (AAM) and polycarbonate membranes have seen widely reported. 1-2 Unlike to metallic NWs, here it’s not possible to see clearly the growing behaviour in current-time transients (i.e. NWs growing out the pore mouth) probably due to resistive nature of semiconducting materials. Our goal is to adress these aspects by means of in situ method and then to optimize the growth of ZnO NWs. For metallic reference, we employed electrochemical parameters obtained for zinc nanowires (Zn NWs) which also is an interesting indirect way to form ZnO NWs after post-treatment.3

AAM were prepared by anodization in Oxalic Acid. Zn NWs were grown in order to determine the critical time to fill the AAM pores with Zn NWs completely. We compare these results with those obtained in ZnO NWs growth and the electrical charge calculated for both Zn and ZnO NWs. Different electrochemical techniques allowed us to determine critical parameters in order to understand the growth mechanism: By Potentiodinamic measurements we found different current behaviour at different nanowires lengths and conventional Impedance together with Mott Schottky measurements allowed to get information about the charge transfer resistance and characterize the semiconducting properties. The current-time transients gave information about diffusive behaviour of electroactives species in each case. We will discuss the effect of key parameters like applied potential and pore lenght in correlation with ex situ characterization (Field emission scanning electronic microscopy with X-Ray microanalysis and X-Ray Difraction)


  1. M.J. Zheng, L.D. Zhang, G.H. Li, W.Z. Shen; Chem. Phys. Lett. 363 (2002) 123–128. (68-02)
  2. Y. Leprince-Wang, A. Yacoubi-Ouslim and G.Y. Wang; Microelectronics Journal 36 (2005) 625–628. (290-81)
  3. J. Wang, M. Tian, N. Kumar and T. E. Mallouk; Nano Lett. 5 (2005) 1247.

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Presentation: Poster at E-MRS Fall Meeting 2007, Symposium B, by Daniel L. Ramirez
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-06 17:52
Revised:   2009-06-07 00:44