Purpose of offered work is to study electrical properties of nanostructured composites on the basis of copper sulphide and porous silicon oxide in variable field. Porous structures were formed by method of sol-gel technology. Tetraethylorthosilicate [TEOS] was exposed hydrolysis in water, and added silasorb- 600, 10 mkm, and as a result was obtained sol, which is after drying it turned out into the gel, and after annealing at 10000C turned out into the xerogel. After annealing sol of polysilicon acid turned out into O-Si-O- silicon-oxide lattice. In the volume of obtained porous structures were formed copper sulphide nanostructures with the help of successful ion layered adsorption and reaction (SILAR). Researches of samples capacity dependences on frequencies (at 1V) showed that, in small frequencies (υ=265 Hz-5 kHz) capacity of samples changes mirror. The situation changes by increasing of frequency (5 kHz-1 MHz). Strong dispersion of dielectric conductivity from the frequency is observed in xerogel. Copper sulphide including to the volume of xerogel results increasing of permittivity and decreasing of frequency dispersion. Increase of permittivity related with copper sulphide filling of porous. Investigation of dielectric loss dependence on frequency showed that, maximum loss after including copper sulphide is shifted in high frequency diapason decrease half-width absorption line. Peak value loss tangent is increased after including copper sulphide. Conducted investigations showed that, in high frequencies (υ=10 kHz-1 MHz) complex resistance of samples decrease after including copper sulphide. Thus nanocomposites have been formed on the basis of CuS: xerogel silicon oxide. It was shown that, with the help of including copper sulphide into the matrix it is possible to change electrical properties of obtained structure. This work carried out by STCU financial support, grant № 3486.

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