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CBN-Ti/TiN composites: hardness and chemical equilibrium as function of temperature
|Ewa Benko 2,3, Piotr Klimczyk 3, Krystyna Lawniczak-Jablonska , Edyta Piskorska , Tery L. Barr 4, Sudipta Seal 5, Vladimir S. Urbanovich 1, Agata Ormaniec 2|
1. Institute of Solid State and Semiconductor Physics of, 17, P.Brovka Street, Minsk 220 072, Belarus
BN and TiN are widely used in industrial application because of their wear resistance. Ti and TiN can be used as binding phase and as layered phase in cBN composites. The cBN-TiN composites were pressed using high pressure and high temperature. Ti and TiN films were grown by the arc plasma deposition method. Some of samples were heat treatment in temperature 1000 and 1400 oC. The various phases formed in different temperature have been studied using element selective techniques. X-ray absorption near edge structure (XANES) at K and L -edges were measured with synchrotron radiation and X-ray photoelectron spectra (XPS) using conventional X-ray tube. The shape of the element's absorption edge is a fingerprint for a chemical bonding of an element. When the investigated element is present in two phases in the sample, the X-ray absorption spectral shapes are a linear combination of the spectra from each phase. The chemical shift of the XPS line was analyzed by curve fitting procedure. The possibility of formation of the metallic Ti , TiB2, TiC and TiN phase's inclusions in the investigated samples was examined. The formation of new phases in cBN-Ti/TiN composites are shown to be determining factors for the microhardness. The hardness was measured by Vickers method using an indentation load of 9.81 N. The hardness of the cBN-TiN composites decreases after heat treatment during the formation of nonstoichiometric phases. The hardness of cBN samples layered with Ti and TiN are increase after annealing process due to the formation of stoichiometric phases.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Ewa Benko
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-06-18 09:18 Revised: 2009-06-08 12:55