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Structural and Electric Fieeld-Induced Properties of the narrow-Gap Semiconductor ZnCdHgTe Thin Films

Halyna M. Khlyap 1Petro G. Sydorchuk Jacek Polit 2Olha M. Pihur 3

1. Drohobych State Pedagogical University, Grushevski 117-1, Drohobych 82106, Ukraine
2. University of Rzeszow, Institute of Physics, Rejtana 16, Rzeszów 35-310, Poland
3. Drogobych State Pedagogical University, Ivan Franko st., 24, Drogobych 82100, Ukraine


Narrow-gap semiconductor solid solutions ZnCdHgTe are of particular interest as an alternative to worldwide known compound CdHgTe. The abstract presents some experimental results on structural and electric field-induced properties of the compound.

The samples were grown on insulator substrates by the pulse laser deposition technology. X-ray diffraction analysis showed a good quality of the deposited films. Transmission line method was applied to measure the surface resistance of the grown layers. Transmission line method gives the value of contact resistance 3 104 Ohm, the surface resistance is 2,5 .105 Ohm, the value of contact line lc = 2.5 mm. Ni contacts are performed by physical vapor deposition technique.

Electric field-induced properties were investigated for as-grown films (at the room temperature and under the applied bias from 0 to 1.0 V) and for the samples underwent a heat treatment in hydrogen during 1 h at T = 300 K. In the first case experimental current-voltage characteristics revealed space-charge-limited currents under all range of applied voltage. In the second case the current-voltage dependencies were changed. Some parameters of the investigated structures as a whole as well as that for the films are calculated. The nature of this behavior is also discussed.


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Presentation: Poster at E-MRS Fall Meeting 2007, Symposium D, by Halyna M. Khlyap
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-03-12 11:22
Revised:   2009-06-07 00:44