Intrinsic point defects often play a significant role in determining  the properties of mercury-containing  solid solutions such as HgCdTe or HgZnTe,  which are fundamental materials for infrared (IR) devices [1]. Point defects are stochastic phenomena characterized by a random spatial distribution within the crystal, actually undetectable by methods sensitive only to long-range order such as x-ray diffraction [2].

We present a non-destructive method for  quantitative determining the vacancy concentration in the lattice of Hg-based semiconductor alloys with  tetrahedral structure. The method is based on the identification of additional vibrational modes (AVM) induced by lattice deformations in the far infrared (FIR) reflectivity spectrum. Although the method is restricted by sensitivity limitations, recent FIR experimental data carried out on HgZnTe and HgCdTe samples containing Hg-vacancies confirmed the presence of AVMs induced by Hg-vacancies in  as-grown crystals.

References

[1] R. Dornhaus and G. Nimitz, Sol. State Phys., 78, 1-119  (1976).

[2] J. Cebulski, E.M. Sheregii, J. Polit, at oll, Appl. Phys. Lett. 92,  121904 (2008).

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