Far-infrared reflectivity as a probe of point defects in Zn- and Cd-doped HgTe

Józef Cebulski 1Eugen M. Sheregii 1Jacek Polit 1Augusto Marcelli 2M Piccinini 2A Kisiel 3Ina V. Kucherenko 4Robert Triboulet 5

1. University of Rzeszow, Institute of Physics, Rejtana 16, Rzeszów 35-310, Poland
2. °Laboratori Nazionali Frascati INFN (INFN), Via E. Fermi 40, Frascati 00044, Italy
3. Jagiellonian University, Institute of Physics (IF UJ), Reymonta 4, Kraków 30-059, Poland
4. Lebedev Physical Institute RAS, Leninskii pr.53, Moscow 117924, Russian Federation
5. CNRS, Laboratoire de Physique des Solides et de Cristallogenese, 1 Place Aristide Briand, Meudon F 92195, France


Intrinsic point defects often play a significant role in determining  the properties of mercury-containing  solid solutions such as HgCdTe or HgZnTe,  which are fundamental materials for infrared (IR) devices [1]. Point defects are stochastic phenomena characterized by a random spatial distribution within the crystal, actually undetectable by methods sensitive only to long-range order such as x-ray diffraction [2].

We present a non-destructive method for  quantitative determining the vacancy concentration in the lattice of Hg-based semiconductor alloys with  tetrahedral structure. The method is based on the identification of additional vibrational modes (AVM) induced by lattice deformations in the far infrared (FIR) reflectivity spectrum. Although the method is restricted by sensitivity limitations, recent FIR experimental data carried out on HgZnTe and HgCdTe samples containing Hg-vacancies confirmed the presence of AVMs induced by Hg-vacancies in  as-grown crystals.


[1] R. Dornhaus and G. Nimitz, Sol. State Phys., 78, 1-119  (1976).

[2] J. Cebulski, E.M. Sheregii, J. Polit, at oll, Appl. Phys. Lett. 92,  121904 (2008).


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Presentation: Oral at E-MRS Fall Meeting 2008, Symposium J, by Józef Cebulski
See On-line Journal of E-MRS Fall Meeting 2008

Submitted: 2008-05-12 13:22
Revised:   2009-06-07 00:48
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