Ag3SbS3 and Tl3SbS3 are seemed to be very attractive for many technical applications due its high electro-optical effect, significant double-beam refraction and transparency in the wave length 0.6-14 mm. The possibility of optical recording information on Ag3SbS3 and Tl3SbS3 thin films was stated earlier. The effect of laser-evaporator pulse recurrence frequency (n) and substrate temperature (TS) on structure of deposited films has been studied. Transmission electron microscopy (TEM), scanning electron microscopy electron microscopy (SEM) and electron diffraction examination were used to study the structure and phase state of the films. The SEM image of the film is shown in Fig. 1. Nevertheless, the electric properties of the compounds (bulk materials and thin films) are poorly investigated. The abstract reports first data of electric characteristics of thin films deposited on KCl wafers by pulse laser deposition technique under following conditions: the substrate temperature was 300 K, time of deposition was varied from 5 to 17 minutes, and thickness of the film did not exceed 0.8 mm. The current - voltage measurements carried out at the room temperature were shown power-behaved dependence similar to that of the current limited by space charge region in typical barrier structures. The so-called electric field-induced aging was also studied. It was found that the experimental current is sufficiently changed (the power-like mode of charge carriers transport is replaced by the velocity saturation mode of the carriers transfer). These data made it possible to perform numerical simulation of the results obtained and construct an energy band diagram of the structures.

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