General Session 1G01: Fundamentals and Modeling |
This session will cover theory, modeling, and experiments designed to learn the fundamental aspects of crystal growth at all length and time scales. The topics will include recent developments on the study of nucleation processes, instability of growth interfaces, the new approaches to understand the mesoscopic scale that joins phenomena on the atomic and macroscopic levels. Studies employing numerical methodologies such as ab initio DFT, classical MD, Monte Carlo, and phase field theories are welcome, as well as classical methods applied to global thermal models, fluid dynamics, segregation, and defect analysis.
Simon Brandon (Technion, Israel)
Modeling anisotropic shape evolution in Czochralski growth of
oxide single crystals
Julian Gale (Curtin University, Australia)
Accurate simulation of aqueous crystal growth - solutions and
challenges
Thomas Kuech (University of Wisconsin, USA)
Fundamentals of vapor growth, bulk and epitaxial.
Makio Uwaha (Nagoya University, Japan)
Step patterns induced by a line source of adatoms
Elias Vlieg (Radboud University Nijmegen, The Netherlands)
The role of liquid ordering in solution growth
Mu Wang (Nanjing University, China)
Concave-corner-mediated self-organized crystal growth
Magdalena ZaĆuska-Kotur (Polish Academy of Sciences, Poland)
Step bunching and meandering processes in the crystal growth
dynamics
Coordinators:
Koichi Kakimoto (Japan)
[email protected]
Jeffrey J. Derby (USA)
[email protected]