Electrical properties the AgGeAsS3xSe3(1-x) (x=0.7-0.9) at pressure 15-45GPa

Olga L. Khifets ,  Alexey N. Babushkin 

Ural State University, Department of Physics, Lenin Av., 51, Ekaterinburg 620083, Russian Federation

Abstract

In Ural State University five-component chalcogenides AgGeAsS3xSe3(1-x) were synthesized and their electrical properties at temperatures 78-400К are investigated . In the present work were investigated their electrical properties at pressure 15-45GPa. Such research represents the large scientific and practical interest, allows to specify areas of probable application of these connections at high pressure. The compound have grey colour and metal shine. These compounds are mixed electronic-ionic conductors. On temperature dependencesthe conductivity and dielectric permittivity the phase transitions are found out.

For generation of pressure up to 45GPa used the carbonado-diamond anvil cell. Electrical properties were investigated with investigated-analyser of impedance RLC-2000 in the field of frequencies 100Hz-200kHz.

The godographs of an impedance of compounds and the dependences of conductivity on frequency are investigated. The hysteresis of conductivity is investigated at gradual the unloading a sample. The analysis of hodographs makes possible to determine the values of dielectric tangent (tgd =ReZ/ImZ). From the data of conductivity and dielectric tangent the the region of existence of phase transitions in samples are received. The influence of structure of a sample on its electrical properties at high pressure is analysed .

This work in part was supported by CRDF (grant EK-005-X1) and grant CRDF and Min. of Education of the Russian Federation (Post Doctoral Fellowship, award EK-005-X1, annex 07, No Y1-E-05-09), and grant RFBR (No 06-02-16492-а)

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Presentation: Poster at E-MRS Fall Meeting 2006, Symposium I, by Olga L. Khifets
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-17 11:53
Revised:   2009-06-07 00:44
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