Conductivity of Nanotubes at Pressures 20 - 50 Gpa

Alexey N. Babushkin ,  Yana Y. Volkova 

Ural State University, Department of Physics, Lenin Av., 51, Ekaterinburg 620083, Russian Federation

Abstract


Conductivity of nanotubes at pressures 20 - 50 GPa

Ya.Volkova, E.Obraztsova*), V.Morev, G. Tikhomirova, A. Babushkin

Physics Department, Ural State University, Ekaterinburg, Russia
*) Institute of General Physics RAS, Moscow, Russia

At pressure 20-50 GPa the conductivity of one-wall nanotubes is
studied.
High pressures have been generated in the high pressure cell with
synthetic carbonado-type diamond anvils of the "rounded cone-plane"
type. The anvils are good conductors and can be used as electric
contacts making possible to measure temperature and pressure
dependences of resistance. The estimation of pressure was proved to be
accurate based on extensive studies of different materials in a wide
range of temperatures and pressures. The error of the estimation
depends on mechanical properties of the compressed material and is
less than 10% in the range of 15 to 50 GPa. The sample were of ť 0.2
mm diameter and thickness from 5 to 30 mm.
It is revealed, that in temperature range 77 - 300 K conductivity has
activation nature.
For the first time is founded that at pressure 35-40 GPa there are
features in behavior of activation energy and mobility of charge
carriers. The features of properties of nanotubes at such pressure are
found for the first time. At pressure decrease of a feature in
behavior of the electrophysical characteristics are saved. The
observed effects are probably connected with partial destruction of
nanotubes with formation of pieces of the large sizes.

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: http://science24.com/paper/386 must be provided.

 

Related papers
  1. Electrical properties the AgGeAsS3xSe3(1-x) (x=0.7-0.9) at pressure 15-45GPa
  2. Pressure influence on thermoelectric properties of lead
  3. Application of diamond anvil cell techniques for studying of plastic deformations in Ti - alloys at pressures up 50 GPa
  4. Application of diamond anvil cell techniques for studying nanostructure formation in bulk materials directly during severe plastic deformation
  5. Electrical properties of nanocrystalline ZrO2 at high-pressure
  6. HiPCO single-wall carbon nanotubes under pressures up to 50 GPa: Electrical properties
  7. Application of diamond anvils techniques for studying nanostructure formation in massive materials directly during severe plastic deformations
  8. Electrical properties in C3N4 under high pressure
  9. Relaxation processes in ZrO2 at high pressures
  10. Phase transitions in multicomponent chalkogenides of silver at high pressure by a method of impedance spectroscopy
  11. Correlation between high-pressure ZrO2 electrical properties and crystallite size
  12. Transport phenomena in ammonium halides under high pressures
  13. Electrical Characteristics of Dielectrics and Semiconductors at High Pressures in Diamond Anvil Cell
  14. Impedance Dielectric Spectroscopy at Superhigh Pressures: Phase Transitions and Metastable States

Presentation: poster at E-MRS Fall Meeting 2002, by Yana Y. Volkova
See On-line Journal of E-MRS Fall Meeting 2002

Submitted: 2003-02-16 17:33
Revised:   2009-06-08 12:55
Google
 
Web science24.com
© 1998-2021 pielaszek research, all rights reserved Powered by the Conference Engine