We study the formation of Ge quantum dots (QD) within Ge-SiO₂/SiO₂ multi-layers deposited by magnetron sputtering deposition. Within a very narrow range of deposition parameters, we found self-organization of QDs in the three-dimensional QD superlattice with hexagonal symmetry. The phase of the QDs and the superlattice unit cell parameters can be tuned by varying deposition and after-deposition annealing parameters. Formed QDs have narrow size distribution and high spatial density yielding many potential applications.

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