Zinc Oxide (ZnO) is currently considered as a promising material for very bright ultraviolet and blue optical devices, like light emitting diode (LED) and laser diode (LD), because of its.interesting characteristics, such as a large direct band gap of 3.37 eV at a room temperature and a large exciton binding energy of 60 meV which is 2.4 times of GaN. However, most of the deposited ZnO films tend to show many point defects, such as Zn interstitials and oxygen vacancies. These oxygen vacancies are responsible for natural n-type of ZnO. Thus, it is of great significance to understand the properties of ZnO films with oxygen contents. This paper reports the effects of oxygen content in ZnO films on the electrical properties. To control oxygen concentration in ZnO films, several kinds of post thermal annealing have been performed in N2 and air at different temperatures of 600 to 800 oC, where oxygen concentrations in ZnO films were measured by Auger electron spectroscopy. The electrical characteristics were measured by Hall measurement in the van der Pauw configuration and transmission line method (TLM). As results, the electron concentration and resistibity can be controlled from low 10^16/cm^3 to mid 10^18/cm3 and from 10^-2 to several tens ohm-cm, respectively. In special, we will discuss^ quantitative relation between oxygen content and carrier concentration.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/7786 must be provided.

1. Improvement of light extraction efficiency in n-ZnO:Ga/p-Si heterojunction light emitting diodes by SiO₂ current-blocking layer
2. Characterization of n-Mg_xZn_1-xO/ZnO/p-GaN double heterostructure grown by pulsed laser deposition
3. Low temperature growth of ZnO thin film by metalorganic chemical vapor deposition
4. Growth and characterization study of multidimensional hierarchical ZnO nanostructures
5. Influence of underlying layers on the growth of 1-D MgZnO nanorods