Zinc oxide is a II-VI compound semiconductors with a wide direct bandgap of 3.37 eV, a large exciton binding energy of 60 meV, and a hexagonal wurtzite structure. Recently, the interest of short-wavelength optoelectronics and transparent conductive oxide has stirred up the research on ZnO thin films. ZnO thin films also have display applications on polymer and glass substrates due to the high transmittance, low resistivity, and relatively low growth temperature.
In this study the ZnO films of ~ 0.5 μm thickness were grown at relatively low growth-temperature (< 300 °C) by metalorganic chemical vapor deposition (MOCVD), compared to the previous MOCVD results. The used substrates are Si (111) and sapphire substrates. While the growth temperature below 300 °C is required to utilize glass and polyimide substrates, ZnO films grown at low temperature showed the deteriorated crystallinity. To promote the ZnO film growth at low temperature, the additional Ar gas was injected through by-pass line except carrier. The XRD analysis revealed that the c-axis orientation of ZnO films increases up to 240 °C, regardless of substrate types. The ZnO film grown at 240 °C showed a strong (002) diffraction peak, a near-bandedge emission at 3.29 eV, and a reduced yellow level emission. This indicates that the ZnO films at low temperature show fairly good characteristics.

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