ZnO is a II-VI oxide semiconductor with a wide band-gap (3.37 eV) and a large exciton binding energy. ZnO-based one-dimensional materials have received increasing attention over the past few years due to their potential applications. Recently, doping of ZnO nanostructures has become the focus of intensive research because their kinds of doping elements can efficiently adjust their electrical, optical, and magnetic properties, which are important for practical applications. By alloying Mg in ZnO, the band gap can be modulated from 3.3 to 7.7 eV by alloying it with different concentration of MgO. In this study, we investigated the characterization of the MgZnO nanorods fabricated by thermal evaporation method on underlying layers such as ZnO template, GaN, and MgZnO template. MgZnO nanorods were fabricated by a two-step growth technique. In the first step of low temperature, Zn seed metals with low melting temperature formed the droplet, and then MgZnO ternary nanorods were grown by injecting oxygen and evaporating Mg atoms in high temperature process of the second step. The vertical growth of the MgZnO nanorods with large-area distribution and uniformity was successfully performed on various underlying layers. We characterized the optical and crystal properties of the vertically grown 1-D MgZnO nanorods using SEM, XRD, Raman, PL, and TEM.

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