Annealing ambient effect on the phase formation in the Ni(10nm)/C(2nm)/Si(001) thin film system obtained by magnetron sputtering was under investigation. Specimens were annealed for 30 sec in the vacuum at 1.3*10^-4Pa and in the flow of nitrogen in the temperature range 400-1000°C. Temperature stimulated solid-state reactions that occur as the result of interdiffusion processes between layers under investigations were examined by metods of x-ray and electron diffraction, resistivity measurements and Rutherford backscattering. It was established that an annealing ambient influences on the development of the solid-state reactions in the Ni(10nm)/C(2nm)/Si(001) thin film system. The sublayer of carbon and oxygen of a residual atmosphere are slow down solid-state reactions of the formation silicide phases of the nickel. Result of it is displaced up the area of existence NiSi to 950°С.

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1. Application of the spectroscopic ellipsometry for studying of the ТіSi₂ silіcide formation induced by thermal annealing of the Ті/Si multilayered films