Annealing ambient effect of the phase formation in the Ni(10nm)/C(2nm)/Si(001) thin film system
|Olena Chukhrai 1, Yurii Makogon 1, Olena P. Pavlova 1, Anna Mogilatenko 2, Gunter Beddies 2|
1. National Technical University of Ukraine KPI, pr.Peremogy 37, Kyiv 03056, Ukraine
Annealing ambient effect on the phase formation in the Ni(10nm)/C(2nm)/Si(001) thin film system obtained by magnetron sputtering was under investigation. Specimens were annealed for 30 sec in the vacuum at 1.3*10-4Pa and in the flow of nitrogen in the temperature range 400-1000°C. Temperature stimulated solid-state reactions that occur as the result of interdiffusion processes between layers under investigations were examined by metods of x-ray and electron diffraction, resistivity measurements and Rutherford backscattering. It was established that an annealing ambient influences on the development of the solid-state reactions in the Ni(10nm)/C(2nm)/Si(001) thin film system. The sublayer of carbon and oxygen of a residual atmosphere are slow down solid-state reactions of the formation silicide phases of the nickel. Result of it is displaced up the area of existence NiSi to 950°С.
Presentation: Poster at E-MRS Fall Meeting 2006, Symposium A, by Olena Chukhrai
See On-line Journal of E-MRS Fall Meeting 2006
Submitted: 2006-05-14 09:22 Revised: 2009-06-07 00:44
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