The work aimed to demonstrate the potential of the spectroscopic ellipsometry approach for studying of the spontaneous and induced by thermal annealing solid state reactions in (3.0 nm Ti /6.7 nm Si)₂₀ multilayered film (MLF) with overall stoichiometry of TiSi₂ deposited by DC-sputtering onto (001) single-crystalline Si kept at room temperature. The structural characterization of the Ti/Si MLF in the as-deposited state and after each step of heat-treatment has been performed also by the methods of x-ray diffraction (XRD) and resistometry.

According to the results of the XRD-study the as-deposited Ti/Si MLF looks amorphous-like. Annealings at 470 -1020 K did not cause any visible changes in the XRD patterns. The optical tool reveals that definite changes in the MLF’s structure appeared after annealing at 470 K. Comparing the experimental and modelled optical properties of the Ti/Si MLF based on different models of the MLF’s structure, the conclusions on various types of short range orders in these amorphous-like Ti/Si MLF have been done. It was established that the regions with a stoichiometry close to TiSi are spontaneously formed in Ti/Si MLF during the deposition. The thickness of such a regions for the (3.0 nm Ti /6.7 nm Si)₂₀ MLF was estimated to be 1 nm. Sequential annealings of the as-deposited Ti/Si MLF completely destroy the layered structure of the films and lead according to the optical data to the formation of С54-TiSi₂ crystalline film after annealing at 1170 K. These results nicely agree with the XRD data.

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