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Structural and optical properties of ZnGeP2 single crystals

Saïd Assoumani Saïd Hassani 1,  A. Godard 2,  Galina A. Verozubova 1,3,  A. Lusson 1,  J. Barjon 1,  C. Vilar 1,  M. Lefebvre 2,  E. Rosencher 2,  P. Galtier 1

1. GEMaC, CNRS-University of Versailles, 45 avenue des Etats-Unis, Versailles 78035, France
2. Office National d'Études et de Recherches Aéospatiales Chemin de la Hunière, Palaiseau, Palaiseau F-91761, France
3. Insitute of Climatic and Ecological Systems of SB RAS (IMCES), 10/3 ave Akademicheskii, Tomsk 634055, Russian Federation

Abstract
Nonlinear optical infrared materials are needed for various applications. ZnGeP2 is an interesting nonlinear optical material in the 0.7-13 mm spectral range due to its unique set of optical properties (wide potential transmission range and high value of nonlinear susceptibility). In this study, the vertical Bridgman technique was used for the growth of ZnGeP2 monocrystals using a seed crystal with the <100> orientation. X-ray diffraction experiments show rocking curves with full width at half maximum of 35 arsec and demonstrate the high quality of the crystal. An excellent transmission is measured in the 2-12 µm range. We particularly focused our interest in the transmission in the 1.5-2 µm range because it corresponds to pump wavelengths for optical parametric oscillators (OPO) applications. In this range, the transmission was shown to be related to defects. In order to cure these defects, thermal annealing under various atmospheres has been investigated. Thermal annealing under Zn atmosphere (500°C, 24h) shows a catastrophic degradation of the transmission whereas annealing under P atmosphere shows a slight improvement for short time annealing (500°C, 3h) followed by a degradation for long time annealing (500°C, 72h). Thermal annealing under vacuum gives an improvement of ~30% in the transmission at 1.6 -1.8 µm. Cathodoluminescence investigation have been used to study the ZnGeP2 based bulk. These results are discussed in relation with the creation and annihilation of stoichiometric and extrinsic defects.

 

 

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Related papers
  1. Vertical Bridgman Growth of Large ZnGeP2 Single Crystals for High Power Applications
  2. Investigation of Defects in ZnGeP2 Single Crystals by X-ray Topography on Base of Borrmann Effect
  3. The Analysis of Defects in ZnGeP2 Single Crystals from Birefringence Images
  4. Bulk Growth ZnGeP2 crystals and their Study by X-Ray Topography

Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 5, by Saïd Assoumani Saïd Hassani
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-30 12:03
Revised:   2013-07-23 14:47