We present GaAs-AlAs-based microcavities growth by molecular beam epitaxy (MBE) with built-in InAs self-assembled QDots or InGaAs QWells. The Bragg mirrors are made of GaAs (high refractive index) and AlAs (low refractive index) λ/4 layers, the cavity is made of GaAs of λ width. We concentrated on a proper tuning of cavity mode’s wavelength to the emission wavelength of QDots or QWells.  We use modeling of optical properties of  microcavities by the transfer matrix method taking into account a temperature dependence of refractive indexes of GaAs and AlAs materials reported in literature. We test growth procedures which take into account this temperature dependence of optical constants and try to minimize the limitations of MBE technology, like flow of molecular beams intensity over microcavity growth time. Properties of QWells embedded are modeled using NextNano software. Emission and reflectivity measurements from InAs QDots or InGaAs/GaAs QWells in GaAs-AlAs microcavities grown will be presented and discussed.   

As an example we present in the Figure a high-resolution image of photoluminescence at low temperature T=4K, which illustrates dispersion of the cavity mode for light emitted by InAs QDots built-in in GaAs/AlAs microcavity. We observe that the emission from the cavity with QDots in wavevector space is composed of a number of discrete states laid along the dispersion curve. The number and shape of discrete states depend on a place in the sample probably indicating that the localized states are formed due to the imperfections of growth.

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