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Growth of Al doped Ca3TaGa3Si2O14 piezoelectric single crystals with various Al concentrations
|Tetsuo Kudo 1, Yuui Yokota 2, Masato Sato 3, Kazushige Toota 3, Ko Onodera 1,3, Akihiro Yamaji 1, Shunsuke Kurosawa 1,2, Kei Kamada 2, Akira Yoshikawa 1,2,4|
1. Institute for Materials Research, Tohoku University (IMR), Sendai 980-8577, Japan
Langasite-type single crystals have been energetically investigated as a piezoelectric material due to the high piezoelectric constant and electromechanical coupling factor at high temperature. Therefore, the langasite-type crystals have been expected to be applied for various sensor devices at high temperature such as the combustion pressure sensor and temperature sensor. Recently, rare-earth (RE) free langasite-type crystals such as Ca3TaGa3Si2O14 (CTGS) and Ca3NbGa3Si2O14 (CNGS) have been developed and they are playing the role of an engine for recent researches of langasite-type crystals because their electrical resistivity at high temperature is higher than the langasite-type containing RE such as La3Ta0.5Ga5.5O14 and La3Ga5SiO14. In addition, the manufacturing cost would be decreased due to the change from crystals with RE ion (La ion) to RE free crystal. However, the RE free langasite-type crystals still contain the Ga ion which is relatively high cost of starting materials and the manufacturing cost of langasite-type crystals are more than ten times higher than quartz element. If the mount of Ga ion in the crystal would be decreased, the manufacturing cost would be decrease. In the previous reports about the langasite-type containing RE ion, the 20% Ga site in the crystal could be substituted by the Al ion. In this study, we grew the Al doped CTGS single crystals with various Al concentrations to decrease the amount of Ga ion in the crystals and their physical properties were investigated.
Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 6, by Tetsuo Kudo
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Submitted: 2013-04-14 17:54 Revised: 2013-08-06 17:56