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prof Akira Yoshikawa
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Affiliation:
Institute for Materials Research, Tohoku University
address:
2-1-1, Katahira, Aoba-ku, Sendai, 980-8577,
Japan
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Affiliation:
New Industry Creation Hatchery Center, Tohoku University
address:
Aoba-yama 6-6-10, Aoba-ku, Sendai, Miyagi, Sendai, 980-8579,
Japan
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fax:
web:
Participant:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
began:
2013-08-11
ended:
2013-08-16
Presented:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Growth of Ce:doped Lu
2
Gd
1
Al
2
Ga
3
O
12
single crystal by the Czhocralski method and their scintillation properties
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Crystal growth of Pr:(Lu,Gd,Y)
3
(Al,Ga)
5
O
12
by micro pulling down method and their scintillation properties
Publications:
Ammonothermal growth of thick gallium nitride films
Control of the segregation coefficient for Eu doped LiSrAlF
6
by Co-doping
Crystal growth and scintillating properties of (Ce, Sr)-doped PrAlO
3
Crystal growth and scintillating properties of (Pr, Si)-doped YAlO
3
Crystal growth and scintillation properties of selected fluoride crystals for VUV scintillators
Crystal growth of Pr:(Lu,Gd,Y)
3
(Al,Ga)
5
O
12
by micro pulling down method and their scintillation properties
Effects of codoping on Scintillation Properties of Eu:SrI
2
Single Crystals
Growth of Al doped Ca
3
TaGa
3
Si
2
O
14
piezoelectric single crystals with various Al concentrations
Growth of Ce:doped Lu
2
Gd
1
Al
2
Ga
3
O
12
single crystal by the Czhocralski method and their scintillation properties
Growth of Eu:SrI
2
Bulk Crystals by Modified μ-PD Method and the Scintillation Properties
Growth of Zinc Oxide Crystals and Their Scintillation Properties
Investigation of congruent composition of (Gd
2-x-y
La
x
Ce
y
)Si
2
O
7
(Ce:La-GPS) scintillator and its single crystal growth
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