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Electronic and diffusion properties of Li in III-V semiconductors

Stepan Svoboda 1,2Vit Novak 1Miroslav Cukr Tomas Jungwirth 1,3Nada Tesarova Petr Nemec 4Kamil Olejnik 1,4

1. Czech Academy of Sciences, Institute of Physics, Cukrovarnicka 10, Prague 16253, Czech Republic
2. Czech Technical University in Prague, Faculty of Nuclear Sciences and Physical Engineering, Department of Physical Electronics, Brehova str. 7, Prague 115 19, Czech Republic
3. School of Physics and Astronomy, University of Nottingham, Nottingham NG72RD, United Kingdom
4. Charles University, Faculty of Mathematics and Physics, Ke Karlovu 3, Prague 12116, Czech Republic


Elemental Lithium from thermal source has recently been used as the first alcali metal ever  in Molecular Beam Epitaxy technique when preparing the room-temperature antiferromagnetic  semiconductor LiMnAs [1]. At the same time, Li was shown to penetrate deep into the substrate material during the epitaxial growth, significantly changing its electrical and optical  properties. We demonstrate that Li behaves as a shallow donor in InAs, whereas it acts as a deep compensating impurity in GaAs. We present a systematic study of diffusion of  Li atoms in both of these materials. Li diffusion coefficients are obtained by comparing  the experiment with numerical simulation, their temperature dependence is used to determine the activation energy of the diffusion process. Photoluminescence spectrum is investigated  and its correspondence to Li content is discussed.

[1] T. Jungwirth, Phys. Rev. B 83, 035321 (2011)


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Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 2, by Stepan Svoboda
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-12 15:09
Revised:   2013-04-12 15:34