Elemental Lithium from thermal source has recently been used as the first alcali metal ever  in Molecular Beam Epitaxy technique when preparing the room-temperature antiferromagnetic  semiconductor LiMnAs [1]. At the same time, Li was shown to penetrate deep into the substrate material during the epitaxial growth, significantly changing its electrical and optical  properties. We demonstrate that Li behaves as a shallow donor in InAs, whereas it acts as a deep compensating impurity in GaAs. We present a systematic study of diffusion of  Li atoms in both of these materials. Li diffusion coefficients are obtained by comparing  the experiment with numerical simulation, their temperature dependence is used to determine the activation energy of the diffusion process. Photoluminescence spectrum is investigated  and its correspondence to Li content is discussed.

[1] T. Jungwirth, Phys. Rev. B 83, 035321 (2011)

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