In the lecture we will review basic electronic, magneto-transport, and magneto-optical properties of bulk (Ga,Mn)As and related ferromagnetic
semiconductors, and devices based on these material systems. The discussion will be
based on complementary theories based on the k · p kinetic-exchange model, microscopic
tight-binding model, and ab initio calculations, and on extensive comparisons of the
theory results to experiment. We will discuss incorporation of magnetic ions into the
semiconductor host lattice, the nature of the insulator-to-metal transition and onset of
ferromagnetism, and the Curie temperature trends. Transport effects covered in
the lecture will include the Curie point singularity in the temperature derivative of the re-
sistivity and extraordinary magne-toresistance coefficients, namely the anisotropic magnetoresistance magneto-optics phenomena. We will also demonstrate how the more direct relation between the spin-orbit coupled exchange-split band structure and transport realized in more complex tunneling or single-electron transistor devices leads to a large enhancement of the magnitude and tunability of the magnetotransport effects. Finally we will discuss the electric-field control of ferromagnetism in DMS transistor structures and implications of (Ga,Mn)As studies for spintronics operating at high temperatures.
[1] T. Jungwirth, J. Sinova, J. Maˇsek, J. Kuˇcera, A.H. MacDonald, Theory of ferromag-
netic (III,Mn)V semiconductors, Rev. Mod. Phys. 78 (2006) 809 - 864.
[2] T. Jungwirth, B. L. Gallagher, J. Wunderlich, Transport properties of ferromagnetic
semiconductors, Spintroncs, Semiconductors and Semimetals vol. 82, p. 135-205 (Else-
vier, 2008) .

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