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MoSe2 Substrates for the Electrodeposition of CISe Semiconductor Films
|Charles Y. Cummings , Jonathon J. Scragg , Laurie M. Peter , Frank Marken|
University of Bath, Department of Chemistry, Claverton Down, Bath BA2-7AY, United Kingdom
The semiconductor copper indium diselenide (CISe) has attracted considerable interest for use as an absorber in solar cells due to its high absorption coefficient (105 cm-1) and useful band gap of 1.05 eV. On a laboratory scale, solar cells based on CuInSe2 have reached efficiencies of 14.5% . However, these use expensive and technically challenging techniques. One practical method for depositing thin films of copper indium diselenide is electro-deposition. Electrodeposition is viewed as a safe, clean and efficient deposition method and can be readily scaled up.
Typically, CISe films are electrodeposited onto Mo-coated substrates. The substrates serve as the back contact of the device. However, Mo is not chemically inert. Immersing the electrode in an acidic or alkaline plating solution (without applying a potential) will cause the Mo to dissolve or corrode. A new methodology to avoid this problem is to passivate the Mo film using a very thin layer of MoSe2. Thin films of MoSe2 are inert and highly conducting. Cyclic voltammograms for the Ru(NH3)63+/2+ and In3+/0 redox systems at the MoSe2 film coated electrodes were reversible.
Figure 1: Reversible cyclic voltammograms of 1 mM Ru(NH3)63+ in 0.1 M KCl at a MoSe2 electrode at potential scan rates 0.01, 0.05, and 0.2 V s-1.
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Presentation: Short communication at SMCBS'2009 International Workshop, by Charles Y. Cummings
See On-line Journal of SMCBS'2009 International Workshop
Submitted: 2009-08-26 13:44 Revised: 2009-09-04 13:11