The semiconductor copper indium diselenide (CISe) has attracted considerable interest for use as an absorber in solar cells due to its high absorption coefficient (10⁵ cm^-1) and useful band gap of 1.05 eV. On a laboratory scale, solar cells based on CuInSe₂ have reached efficiencies of 14.5% [1]. However, these use expensive and technically challenging techniques. One practical method for depositing thin films of copper indium diselenide is electro-deposition. Electrodeposition is viewed as a safe, clean and efficient deposition method and can be readily scaled up.

Typically, CISe films are electrodeposited onto Mo-coated substrates. The substrates serve as the back contact of the device. However, Mo is not chemically inert. Immersing the electrode in an acidic or alkaline plating solution (without applying a potential) will cause the Mo to dissolve or corrode. A new methodology to avoid this problem is to passivate the Mo film using a very thin layer of MoSe₂. Thin films of MoSe₂ are inert and highly conducting. Cyclic voltammograms for the Ru(NH₃)₆^3+/2+ and In^3+/0 redox systems at the MoSe₂ film coated electrodes were reversible.

Figure 1: Reversible cyclic voltammograms of 1 mM Ru(NH₃)₆³⁺ in 0.1 M KCl at a MoSe₂ electrode at potential scan rates 0.01, 0.05, and 0.2 V s^-1.

[1] M. A. Green, K. Emery, D. L. King, S. Igari, W. Warta, Prog. Photovolt. Res. Appl. 13 (2005) 49.

[2] R. N. Bhattacharya, W. Batchelor, J. E. Granata, F. Masoon, H. Wiesner, K. Ramanathan, J. Keane, R. N. Noufi,. Sol. Energy Mater. Sol. Cells, 55 (1998) 83.

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