Search for content and authors

Photoluminescence and Electrical properties of Epitaxial Al-doped ZnO thin film

Jun Hong Noh ,  Jae-Sul An ,  Chin Moo Cho ,  Hyun Soo Han ,  In-Sun Cho ,  Kug Sun Hong 

Seoul National University, Department of Materials Science and Engineering (MSE, SNU), San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-744, Korea, South


Undoped and Al-doped ZnO (AZO) thin films were epitaxial grown on c-sapphire substrate by pulsed laser deposition. Photoluminescence and electrical properties of the as-deposited, 450 oC-air annealed, and 450 oC-subsequent hydrogen annealed films were measured. Near band edge (NBE) emission of AZO is far less than that of undoped ZnO. Further, the NBE emission of AZO reduced after 450 oC air annealing. However, subsequent hydrogen annealed AZO show more intense NBE emission than the as deposited film. In addition, electrical properties such as carrier concentration and Hall mobility were reversible changed as an oxidizing and a reducing annealing. In this study, temperature dependent photoluminescence properties of AZO as transparent conducting oxide which annealed in oxidizing and reducing atmosphere discussed combining their electrical properties.


Legal notice
  • Legal notice:

Related papers

Presentation: Poster at E-MRS Fall Meeting 2008, Symposium B, by Jun Hong Noh
See On-line Journal of E-MRS Fall Meeting 2008

Submitted: 2008-05-20 19:01
Revised:   2009-06-07 00:48