Infra red spectroscopic ellipsometry (IRSE) has been developped for semiconductors and dopants characterization. The Drude tail in Mid IR enables to quantify the dose of active dopants, their mobility, the depth and the sheet resistance. In case of polymers with nanometer thickness, the IRSE enables to measure not only the thickness but also the refractive index, N and k absorption coefficient, without the need for Kramers Kronig assumptions. The N and k in the IR range are linked to the dielectric value for lowK and can be measured with the density or porosity of the layer. The sensibility to very thin films will be shown as well as the recognition of the interlayer SiO2 under highK HfAlOx layers. new application for porous layers will be presented.

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