The idea of a spintronic analogue of a field-effect transistors, spoken in [1] and based on the control of spin polarization of a charge carriers with use of a spin-orbit interaction with outer electric field is still not realized experimentally. The same is true for idea of a polarization transistor [2], the essence of which is in polarization magnetooptic bistability effect in magnetoordered films. Such effect, been found experimentally, would make it possible to realize binary logic in s- and p-polarization of a light beam (or even single photon) and to build quantum computer with colossal parallel information processing in perspective.

Nowadays there is a growth of interest to the only one known magnetoordered Heysler Ni₂MnGa alloy, in which a shape memory effect as on temperature, so on outer magnetic field was reliably discovered. A 90 nm and 30 nm films of this substance were synthesized, i.e. ones containing only several tens of crystallographic cells in a specified direction. Here of Kerr’s and Faraday’s effects in films of Ni₅₃Mn₂₅Ga₂₂, Ni_2.18Mn_0.82Ga are considered with combined magnetostructured phase transition with use of a scalar relativistic version of the tight-binding linear muffin-tin-orbital atomic-sphere approximation within the local-spin-density approximation. An outer magnetic film is deforming the film and consequently causing reallocation of a “down” and “up” spin polarized electrons on the film surface, influencing on photons polarization change as at photons reflection from a metal film, so at their transition through it. It seems that electrons spin overturn can cause amplification effect (transistor) of transformed light pulses.

Author is grateful for BRFFI-RFFI F04R-080 grant for partial financial support

References

[1] Datte S., Das B. Appe.Phys.Lott.1991.U.56.P.665

[2] Kuzavko Yu.A., Shavrov V.G. Digests of XII Soviet seminar “Novel magnetic materials for microelectronics” Novgorod, USSR, 1990 v.2. p.97

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/11674 must be provided.

1. Acousto-electronic Intellectual Sensors Based on Surface Waves
2. The Influence of a Heysler Ferromagnetic Alloy Film on the Spread of Surface Acoustic Waves
3. The investigation of longitudinal acoustic waves in Heusler Ni₅₃Mn₂₅Ga₂₂ alloy crystal with coupled magnetostructural transition
4. The surface waves acoustoelectronic sensors based on films of Heusler alloy
5. The acoustical spectral investigations of a ferromagnet Heusler Ni₅₃Mn₂₅Ga₂₂ alloy crystal
6. Surface waves in nanofilms of Heysler ferromagnetic alloy
7. Magnetodeformations influence on spin-electron transport in nanofilms
8. Acoustic Spectrum of Nanoparticles of a Heysler Shape Memory Ferromagnetic Alloy
9. The acoustical investigations of a Ni₅₃Mn₂₅Ga₂₂ Heysler alloy ferromagnet crystal
10. TRANSFORMATION OF ULTRASOUND ON THE BORDER OF STRONGLY ANISOTROPIC FERROMAGNETIC CRYSTALS
11. SPIN TRANSISTOR IN STRUCTURES BASED ON SMART MATERIALS
12. Acoustical properties and acoustopseudoplastic effects in ferromagnetic shape memory alloy NiMnFeGa