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SPIN TRANSISTOR IN STRUCTURES BASED ON SMART MATERIALS
|Yuri A. Kuzavko
Brest State Technical University, Brest 224017, Belarus
It is perspective to technologicaly use the spin of electron - a pure quantum quality with no macrocosm analogues. Spintrone technologies will allow quicker electronic devices. The main thing to be mastered is the control of spin currents and electrons flows. Not electric but magnetic fields are to be used for that, as electron can be represented as a micro magnet.
The idea of spintrone analogue of field transistor, firstly spoken by Datta and Das, based on controlling the spine polarization of charge carriers by spin-orbital interconnection with outer electric field, is still not realized. The same with the idea of of polarization transistor, formulated by Kuzavko and Shavrov, based on the bistable nature of the polarization change of the optical quantas, passed through the magnetic film in the area of its spin-reorientational transistor. Combining the easiness of charge control in semiconductors with use of electrone spin degree of freedom for the information storing and transmitting is very actual. It is reasonable to consider alternative theoretical models of spintrone and polarization devices, especially ones with use of high-temperature superconductors and ferromagnetic Heysler alloys with magnetocontrolled shape memory. Here the conditions of the spin current flow and in the structure of semiconductor-dielectric-Heysler ferromagnetic alloy are considered with taking into account the influence of temperature and external magnetic field. Transmitting the stresses of 10 HPa into the conducting film of the device from its substrate, made on base of spoken ferromagnetic, causes curving and new zones appearing for the charge carriers in semiconductor, with their spin polarization caused by spin-atomic interconnection in boundary regions of a spin transistor. The use of nanometric magnet-power microscopy for spin currents and stages registration is substantiated.
Author is grateful for BRFFI and RFFI (F04R-080, 04-02-81058, 03-02-17443 grants) for their support.
Presentation: oral at E-MRS Fall Meeting 2005, Symposium C, by Yuri A. Kuzavko
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-07-11 20:28 Revised: 2009-06-07 00:44