Numerous studies have demonstrated novel nanodevices and applications based on ZnO nanostructures, such as nanolaser, nanogenerator, and acoustic resonator. In the field of photodetection, although a few studies have demonstrated novel photodiode based on nanostructures recently, little work has been done in electrical characteristics of heterojunction based on nanostructures.

In the present study, the electrical performances of the nano-photodiode based on a heterojunction of n-ZnO NWs with p-Si substrate with spatial resolution at the nanometer scale have been characterized using an ultra-high-vacuum conducting atomic force microscopy. Compared with the expected values of 1.0 to 2.0 reported in ZnO-based p-n junction in the previous studies, the abnormally high diode ideality factor (>>2) was obtained. A theoretical model was proposed to analyze the anomalously high ideality factor of the prepared n-ZnO/p-Si junction diode.

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