In this study the rhenium electrodeposition process onto p-Si(100) and the photoelectrochemical behaviour of the hydrogen evolution reaction (HER) on the pSi/Re electrode system were examined. The study of the formation of p-Si/Re system was carried out by means of cyclic voltammetry (CV), and the potential-steps method from which the corresponding nucleation and growth mechanism (NGM) were determined. Both methods were performed under illumination for the electrons photogeneration in the conduction band of the p-Si. Likewise, a morphologic analysis of the deposits obtained at different potential values, it was realized by means of Atomic Force Microscopy (AFM). The HER study onto the p-Si modificated by rhenium, was carried out by means CV using 0.1 M H₂SO₄ electrolyte.

The results obtained indicated that ReO₄^- ions are reducing in the surface of the semiconductor. The NGM obtained through adimensional analysis of the j_ph/t transients was 3D progressive nucleation diffusional controlled which was confirmed by AFM. The analysis of the HER using the p-Si/Re electrodic system in the acidic media indicated that the rate of this process increases aproximately in two orders of magnitud, fact that can be atributted to the photoelectrocatalytic effect of the p-Si/Re system on the HER.

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1. Semiconductor properties of a-Fe₂O₃ (hematite) thin films prepared on FTO electrodes by hydrogen peroxide electroreduction. Influence of the E/t perturbation program used during electrosynthesis of iron oxyhydroxide precursor.