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Characterization and modelling of a superconducting flux flow transistor with a three-channel structure by an atomic force microscope method

Seokcheol Ko 1Seong-Jong Kim 2Min-Su Han 2

1. Jeonnam Regional Innovation Agency (JINA), 1000 Namak-Ri Samhyang-Myun, Muan-Gun Jeonnam 534-700, Korea, South
2. Mokpo Maritime University, Chukkyo Dong, Mokpo 530-729, Korea, South

Abstract

The superconducting flux flow transistor (SFFT) with a three-channel was successfully fabricated by an atomic force microscope (AFM) technique. The current-voltage measurements were performed on drain current line with a three-channel, under the gate currents up to 6 mA. From the calculated and measured results, the current-voltage characteristics of an SFFT with a three-channel are discussed. The transresistance value was 0.017 Ω for Id=221mA at Ig=1 mA.

 

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Related papers

Presentation: Poster at E-MRS Fall Meeting 2007, Symposium D, by Seokcheol Ko
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-01 18:04
Revised:   2009-06-07 00:44