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Characterization and modelling of a superconducting flux flow transistor with a three-channel structure by an atomic force microscope method |
Seokcheol Ko 1, Seong-Jong Kim 2, Min-Su Han 2 |
1. Jeonnam Regional Innovation Agency (JINA), 1000 Namak-Ri Samhyang-Myun, Muan-Gun Jeonnam 534-700, Korea, South |
Abstract |
The superconducting flux flow transistor (SFFT) with a three-channel was successfully fabricated by an atomic force microscope (AFM) technique. The current-voltage measurements were performed on drain current line with a three-channel, under the gate currents up to 6 mA. From the calculated and measured results, the current-voltage characteristics of an SFFT with a three-channel are discussed. The transresistance value was 0.017 Ω for Id=221mA at Ig=1 mA. |
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Presentation: Poster at E-MRS Fall Meeting 2007, Symposium D, by Seokcheol KoSee On-line Journal of E-MRS Fall Meeting 2007 Submitted: 2007-05-01 18:04 Revised: 2009-06-07 00:44 |