Microstructure of Fe3O4 film grown on Si(100) substrate, investigated by TEM and X-ray methods
|Mirosław Kozłowski 3, M. Bari 1, C. De Nardi 1, Ryszard Diduszko 2,3, Piotr Dłużewski 2, A. Szczepańska 2|
1. Trinity College, Deptartment of Physics, College Green, Dublin Dublin 2, Ireland
Epitaxial growth of metal oxide films on semiconducting substrates plays an important role in microelectronic monolithic integrated circuits. Different techniques like MBE, laser ablation, chemical vapour deposition and sputtering are used for production of the layers. The main difficulties arise from lattice mismatch and chemical reactions between semiconductor substrate and oxide layer. This has been observed for Fe3O4 film deposited by laser ablation on Si substrate.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Mirosław Kozłowski
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-27 17:04 Revised: 2009-06-08 12:55
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