Interfacial Processes and Properties of Advanced Materials
The aim of the symposium is to bring together top experts on
interfaces in order to theoretically and experimentally explore the
connection between the atomic structure, the chemical composition, the
diffusion effect, growth dynamics and other interfacial phenomena with
the materials properties. The theoretical aspect will deal with the
geometrical models, which are nowadays used for the description of
interfaces and interfacial phenomena. It will also encompass modeling
of the atomic structure by empirical potentials and ab initio
techniques. The materials to be addressed include metals,
semiconductors, and ceramics whose industrial development needs a
strong support from fundamental approaches and in which interfacial
phenomena play a critical role (polycrystalline semiconductors,
epitaxial films of oxides, superconductors and semiconductors).
Experimental work will report on the structural information,
segregation, grain growth, and interface formation in various
materials. Mechanical, optical, and electronic properties will be
covered. The ultimate objective is to establish a robust knowledge of
the role of interfaces on the properties of key materials. The combined
approach of theoretical and experimental expertise of the key speakers
will shed a new insight on device fabrication, which is becoming
critically dependent on the interfacial behaviours.
The topics will include but will not be exclusive of:
Theory and modelling
The proceedings will be published in Physica Status Solidi (PSS).
Invited papers should be limited to 8 pages, and contributed papers to 4 pages.
The manuscript should be submitted electronically as an attachment to e-mail sent before August 20, 2005 to the address: firstname.lastname@example.org.Additionally, tree printed copies and .doc file on a CD or a 3.5-inch diskette of the manuscript should be submitted to the manuscript office on 5 th Sept. 2005.
Authors will need to use the PSS template available at: