The aim of the symposium is to bring together top experts on interfaces in order to theoretically and experimentally explore the connection between the atomic structure, the chemical composition, the diffusion effect, growth dynamics and other interfacial phenomena with the materials properties. The theoretical aspect will deal with the geometrical models, which are nowadays used for the description of interfaces and interfacial phenomena. It will also encompass modeling of the atomic structure by empirical potentials and ab initio techniques. The materials to be addressed include metals, semiconductors, and ceramics whose industrial development needs a strong support from fundamental approaches and in which interfacial phenomena play a critical role (polycrystalline semiconductors, epitaxial films of oxides, superconductors and semiconductors). Experimental work will report on the structural information, segregation, grain growth, and interface formation in various materials. Mechanical, optical, and electronic properties will be covered. The ultimate objective is to establish a robust knowledge of the role of interfaces on the properties of key materials. The combined approach of theoretical and experimental expertise of the key speakers will shed a new insight on device fabrication, which is becoming critically dependent on the interfacial behaviours.
The topics will include but will not be exclusive of:

Theory and modelling

  • Structure analysis
  • Physical and chemical behaviour of interfaces
  • Atomic and electronic structure of interfaces
  • Martensitic transformation
  • Hetero-epitaxial growth of highly mismatched materials
  • Stress, strain and relaxation in small lattice mismatched III-V epitaxial systems
  • Metal-oxide interfaces
  • Si-oxide interfaces
  • Interfaces in perovskite epitaxial heterostructures
  • Capacitors and CMOS transistors
  • Varistors
Scientific Committee:
P. Dłużewski (IP PAS, Warsaw), P. Komninou (U. Thessaloniki), P. Bristowe (U. Cambridge), J.-L. Maurice (CNRS/Thales, Orsay, France), R.C. Pond (U. Liverpool), G. Nouet (SIFCOM, Caen), P. Ruterana (SIFCOM, Caen), C.J. Humphreys (U. Cambridge), D. Hesse (Max Planck, Halle), T. Karakostas (U. Thessalonique), P. Gibart (Lumilog, Vallauris, France), A. Rocher (CEMES Toulouse), J. H. Je (U. Pohang), E. Yoon (U. Seoul)


  • Dr. P. Dłużewski, Institute of Physics, Polish Academy of Science, Warsaw, Poland
  • Dr. J.-L. Maurice, Unité Mixte de Physique, CNRS/Thales, Orsay, France
  • Dr. P. Bristowe, Department of Materials Science & Metallurgy, University of Cambridge, Cambridge, United Kingdom
  • Prof. Ph. Komninou, Department of Physics, Aristotle University of Thessaloniki, Thessaloniki, Greece


The proceedings will be published in Physica Status Solidi (PSS).

Invited papers should be limited to 8 pages, and contributed papers to 4 pages.

The manuscript should be submitted electronically as an attachment to e-mail sent before August 20, 2005 to the address: dluzew@ifpan.edu.pl.

Additionally, tree printed copies and .doc file on a CD or a 3.5-inch diskette of the manuscript should be submitted to the manuscript office on 5 th Sept. 2005.

Authors will need to use the PSS template available at:


Office of Naval Research Global


Web site address is: http://e-mrs.org/meetings/fall2005/F.html

Contact e-mail address: dluzew@ifpan.edu.pl