Nitride semiconductors have revolutionized many areas of technology and increasingly in everyday life. To mention a few, blue/green LEDs; white LEDs, replacing incadescent bulbs; violet laser diodes used in high density data storage; UV emitters for detection of bio-materials; transistors for high-power, high-frequency electronics.

From the A1N-GaN-InN family, the latter binary compound is still a mysterous material, as many of its properties have not yet been adequately measured. InN bulk crystals do not exist and epi-layer are still of relatively poor quality. However, InN attracts very large interest because of a vivid debate on its band gap, and still unexplored properties of the ternary and quaternary compounds of (AlGaIn)N.

The aim of this Symposium is to present and discuss the recent advances in research on InN and Inrich related alloys. The topics will include:

  • growth
  • crystallographic properties
  • optical and electronic properties
  • electronic and optoelectronic devices

Scientific Committee:

O. Ambacher (TU. Ulmenau, Germany), V. Yu. Davydov (IOFFE, Russia), P. Gibart (CRHEA, France), B. Gil (U. Montpellier, France), M. Heuken (Aixtron, Germany), T. Inushima (Japan), Mike Leszczynski(Unipress, Poland), B. Monemar (U. Linköping, Sweden), K. P. O'Donnell (U. Strathclyde,UK), P. Perlin (Unipress, Poland), J. Redwing (Pennstate,USA), P. Ruterana (SIFCOM, France), T. Steiner (AFOSR, USA), M. Stutzmann (TU. Munich, Germany), E. Weber (UC Berkeley, USA), C. Wood (ONR,USA), C. Wetzel (RPI, USA)

Tentative list of invited speakers:

  • F. Bechstedt (U. Jena, Germany): Dielectric function of InN: Non parabolicity and excitonic effects
  • S. Butcher (U. Macquarie, Australia): The nitrogen defect in InN
  • A. Cartwright (SUNY, Buffalo, USA): Ultrasfast carriers and electronic structure of InN
  • A. Doolittle (GIT, USA): Progress in InN based solar cells
  • R. Goldhahn (TU Ulmenau, Germany): Optical anisotropy of InN from near-IR to deep-UV
  • A. Klochikhin (IOFFE, Russia): Acceptor states in photoluminescence of n-InN
  • Y. Nanishi (U. Ritsumeikan, Japan): Growth and properties of InGaN and InN/InGaN quantum wells
  • M.A. Poisson (Thalesgroup, France): InGaN/GaN HEMTs
  • W. Richter (TU Berlin, Germany): MOCVD Growth of InN
  • W. Schaff (U. Cornell, USA): Electrical properties of InN
  • T. Shubina (IOFFE, Russia): Plasmonic effects in InN-based structures with nano-clusters of metallic indium
  • T. Suski (Unipress, Poland): Comparison of resonant donor states in InN and GaN
  • T. Veal (U. Warwick, UK): Electronic properties of n- and p-type InN surfaces
  • W. Walukiewicz (U. Berkeley, USA): Band structure and properties of InN and In-rich InGaN alloys
  • S.H Wei (NREL, USA): Ab initio investigation of the InN band gag anisotropy
  • E. Yoon (SNU, Korea): Growth of In-rich InGaN/GaN self- assembled quantum dots and multiple quantum wells and their optical properties
  • A. Yoshikawa (U. Chiba, Japan): MBE grown Indium based III-N nanoheterostructures


  • Dr. P. Ruterana, SIFCOM-ENSICAEN,Caen, France
  • Prof. M. Stutzmann, W. Schottky Institute TU Munich, Garching, Germany
  • Dr.Colin Wood, Electronic Div. Code 312, Office of Naval Research, Arlington, USA
  • Prof. Mike Leszczynski, Institute of High Pressure Physics ,UNIPRESS and TopGaN Ltd, Warsaw, Poland


The proceedings will be published in Physica Status Solidi (PSS).
The deadline for the submission of the manuscript is August 15th.
Invited papers should be limited to 8 pages, and contributed papers to 4 pages.
Authors will need to use the PSS template available at:


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