Indium nitride and indium rich related alloys: challenges and opportunities
Nitride semiconductors have revolutionized many areas of technology and increasingly in everyday life. To mention a few, blue/green LEDs; white LEDs, replacing incadescent bulbs; violet laser diodes used in high density data storage; UV emitters for detection of bio-materials; transistors for high-power, high-frequency electronics.
From the A1N-GaN-InN family, the latter binary compound is still a mysterous material, as many of its properties have not yet been adequately measured. InN bulk crystals do not exist and epi-layer are still of relatively poor quality. However, InN attracts very large interest because of a vivid debate on its band gap, and still unexplored properties of the ternary and quaternary compounds of (AlGaIn)N.
The aim of this Symposium is to present and discuss the recent advances in research on InN and Inrich related alloys. The topics will include:
O. Ambacher (TU. Ulmenau, Germany), V. Yu. Davydov (IOFFE, Russia), P. Gibart (CRHEA, France), B. Gil (U. Montpellier, France), M. Heuken (Aixtron, Germany), T. Inushima (Japan), Mike Leszczynski(Unipress, Poland), B. Monemar (U. Linköping, Sweden), K. P. O'Donnell (U. Strathclyde,UK), P. Perlin (Unipress, Poland), J. Redwing (Pennstate,USA), P. Ruterana (SIFCOM, France), T. Steiner (AFOSR, USA), M. Stutzmann (TU. Munich, Germany), E. Weber (UC Berkeley, USA), C. Wood (ONR,USA), C. Wetzel (RPI, USA)
The proceedings will be published in Physica Status Solidi (PSS).
The deadline for the submission of the manuscript is August 15th.
Invited papers should be limited to 8 pages, and contributed papers to 4 pages.
Authors will need to use the PSS template available at: