dr Tomasz Sochacki

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Affiliation:


Institute of High Pressure Physics

address: , Warsaw, 01-142, Poland
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Affiliation:


TopGaN Sp. z o. o.

address: Sokolowska 29/37, Warsaw, 01-142, Poland
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Participant:


15th Summer School on Crystal Growth - ISSCG-15

began: 2013-08-04
ended: 2013-08-10
Presented:

15th Summer School on Crystal Growth - ISSCG-15

Preparation of free-standing GaN substrates from thick GaN layers crystallized by Hydride Vapor Phase Epitaxy on ammonothermally grown GaN seeds

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Preparation of free-standing GaN substrates from thick GaN layers crystallized by Hydride Vapor Phase Epitaxy on ammonothermally grown GaN seeds

Publications:


  1. Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds
  2. Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds
  3. Preparation of free-standing GaN substrates from thick GaN layers crystallized by Hydride Vapor Phase Epitaxy on ammonothermally grown GaN seeds
  4. Preparation of free-standing GaN substrates from thick GaN layers crystallized by Hydride Vapor Phase Epitaxy on ammonothermally grown GaN seeds
  5. Semipolar and nonpolar AlGaN growth mechanisms under N-rich conditions in PAMBE



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