Ga_1-xIn_xSb bulk crystals are important material for thermo-fotovoltaic devices and sensors in the infrared region 1,7-6,8 microns. They can be also applied as high quality substrates for optoelectronic multicomponent and multilayer A^IIIB^V epitaxial structures, allowing to overcome the latice mismatch problems.

In this study the growth conditions of Ga_1-xIn_xSb single crystals by Czochralski method were investigated. The big difficulties in crystalization of such A^IIIB^V ternary compounds from the melt are connected with constitutional supercooling, wide separation between solidus and liquidus and differences of the distribution coefficient of components.

Crystal growth axperiments were carried out from Ga_1-xIn_xSb melt with increasing In contain up to 35at%. Especially, influence of pulling rate and liquid phase composition on monocrystalline growth was investigated. Crystals were grown in pure H₂ atmosphere in [111] direction, using GaSb and/or Ga_1-xIn_xSb seeds. With increasing In contain in the melt, pulling rate was decreasing from 15mm/h up to 1mm/h. As result single crystals with dimensions length - (80-150)mm, diameter - (10-25)mm and In contain up to 6% were obtained.

The following methods were used for evaluation of obtained crystals properties:

• Wavelength Dispersion Spectroscopy and photoluminescence methods (indium contain and distribution).
• Hall measurements (electrical parameters).
• Chemical etching and Nomarski microscope observation and scaning microscopy (structure perfection).

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