The aim of this work was to find out technological conditions which allow to obtain undoped GaP single crystals (“n” type) with carrier concentration below 5x10¹⁶cm^-3.

Synthesis by injection method and Czochralski crystal growth were used applying Liquid Encapsulation Technique. In this work the influence of water content in B₂O₃ encapsulant (applied during injection synthesis and LEC growth) on GaP crystals properties was investigated.

Two different thermal systems were applied: standard (2 heaters) and modified (with additional heater inside encapsulant layer). The reactions inside the crucible were investigated with the special focus on the role of carbon.

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1. Making attempts to obtain semiconductor compounds for applications in advanced thermoelectric generators and further investigating
2. Pressure estimation in quartz ampoule in during InP synthesis by HGF method, on the base temperature distribution measureent.
3. Investigation of Ga_1-xIn_xSb crystals growth by Czochralski method
4. Elecrical and optical studies of undoped GaP grown by LEC method