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Preparation and characterization of CoSi2-Si eutectic composite

Wojciech Gurdziel ,  Krzysztof Szostek ,  Zygmunt Wokulski 

University of Silesia, Institute of Materials Science, 12, Bankowa Str., Katowice 40-007, Poland

Abstract

Recently very interesting materials for microelectronic applications are semiconductor based composites. Semiconductor-metal eutectic composites are generally characterized by special physical properties. The example of such composite is InSb-NiSb eutectic which is applied in microelectronic. In a literature there are not much data concerning Si-CoSi2 eutectic composite that belongs to mentioned type. Therefore the aim of the study was to establish the general technological parameters of obtaining the Si-CoSi2 fibrous eutectic.

The composite was obtained by in situ longitudinal directional crystallization technique using Bridgman method. Three different pulling down speeds were applied in order to examine influence of applied speeds on microstructure of the obtained ingots.

The obtained ingots were investigated using light microscopy (Opton interference microscope, Nikon alphaphot 2) and scanning electron microscopy (SEM), X-ray microanalyser (JEOL JMS-6480). It was shown that the morphology of CoSi2 metallic fibres strongly depends on the crucible pulling down speed.
 

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Related papers

Presentation: Poster at Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth, by Krzysztof Szostek
See On-line Journal of Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Submitted: 2007-01-15 12:06
Revised:   2009-06-07 00:44