Recently very interesting materials for microelectronic applications are semiconductor based composites. Semiconductor-metal eutectic composites are generally characterized by special physical properties. The example of such composite is InSb-NiSb eutectic which is applied in microelectronic. In a literature there are not much data concerning Si-CoSi₂ eutectic composite that belongs to mentioned type. Therefore the aim of the study was to establish the general technological parameters of obtaining the Si-CoSi₂ fibrous eutectic.

The composite was obtained by in situ longitudinal directional crystallization technique using Bridgman method. Three different pulling down speeds were applied in order to examine influence of applied speeds on microstructure of the obtained ingots.

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