Metal disilicides are good thermal and electrical conductors, possess a high hardness and chemical stability. They have properties which are the most required in microelectronic fields. There are used in VLSI and ULSI circuits.
One of disilicides, which possesses above mentioned specificity is CoSi₂. It crystallizes in C1 (fluorite) type of crystal structure (space group). From the electrical properties CoSi₂ can be classified into metallic silicides. It can be doped with different elements for far possibility of changing their properties. In our work we chose iron as a dopant thanks to semiconducting character of β-FeSi₂ so the mean goal of this work was obtaining of (Co, Fe)Si₂ solid solution crystals.
Four melting processes were performed. Each of melts included different percent of iron contents, from 1 at.% to 50 at.% of Fe. Melting process was conducted by Bridgman method in the furnace with vertical temperature gradient under inert atmosphere. Raw materials: Co (99,8%), Fe (99,98%) and Si (99,999%) (weighed from 15g to 20g) were placed in alumina crucibles and melted at a temperature 1550ºC. Next crucibles with melt were slowly pulled out from the high temperature zone.
Obtained samples of Co_1-xFe_xSi₂ have been subjected to metallography observation, X-ray and mechanical properties research. Metallography observation shown three different separate phases which were confirmed by X-ray phase analysis. Laue patterns shown that Co_1-xFe_xSi₂ for x > 1.0 at.% of Fe ingots were not monocrystalline. It was also shown that the growth of Co_1-xFe_xSi₂ solid solution crystals is possible only for x = 1 at.% of Fe.

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