A considerable effort has been devoted to understand the origin of ferromagnetism, often persisting up to above room temperature, in a number of semiconductors doped with transition metals. In the talk, I will argue that ferromagnetic DMS can be divided into three categories. The first consists of (Ga,Mn)As and related compounds. Here, theory built on Zener's model of carrier-mediated ferromagnetism and the Kohn-Luttinger kp theory of semiconductors describes thermodynamic, micromagnetic, optical, and transport properties. To the second group belong compounds, in which the proximity of the localisation boundary and/or a competition between long-range ferromagnetic and short-range antiferromagnetic interactions leads to an electronic nanoscale phase separation that results in characteristics similar to colossal magnetoresistance oxides. Finally, in a number of compounds a chemical nanoscale phase separation is observed, reminiscent of spinodal decomposition. Mechanisms accounting for this effect in particular materials will be discussed.

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1. On the formation of magnetic nanocomposites and impurity complexes in GaN doped with Fe and Mn
2. Critical exponents of dilute ferromagnetic semiconductors (Ga,Mn)N and (Ga,Mn)As
3. Growth and doping of (Ga,Mn)N epitaxial films
4. Magnetyczna spektroskopia i spektro-mikroskopia na materiałach spintronicznych
5. Semiconductor spintronics
6. Semiconductor spintronics
7. Origin of ferromagnetism and phase separations in diluted magnetic semiconductors
8. Origin of ferromagnetism and phase separations in diluted magnetic semiconductors
9. Photoluminescence and Hall studies of GaN:Fe and (Ga,Fe)N:Mg layers
10. Wide band gap semiconductors as spintronic and ferromagnetic materials