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XPS investigations of NdGaO3 wafers
|Ewa Talik 1, Magdalena M. Kruczek 1, Halina Sakowska 2|
1. University of Silesia, Katowice, Poland
X-ray photoelectron spectroscopy was used to examine the electronic structure of neodymium gallium perovskite single crystals. They are a pseudo - cubic materials being used as a substrate for epitaxial growth of high temperature superconductors and for group III nitrides (such as GaN). The NdGaO3 single crystals were grown by the Czochralski method. In order to prepare specimens for XPS analysis, crystals were cut into wafers (0.7 mm thickness), lapped and polished (0.1 m SiO2). Before the XPS analysis substrates were chemically etched in H3PO4 at 650C for 10 min.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Ewa Talik
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-23 12:33 Revised: 2009-06-08 12:55