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Crystal and electronic structure of GdPdX (X=Al, Si, Ga, Sn, Ge, In)

Ewa Talik 1Joachim Kusz 1Horst Böhm 2Michał Matlak 1Magdalena Skutecka 1Monika Klimczak 1

1. University of Silesia, Katowice, Poland
2. Johannes Gutenberg Universität, Staudingerweg 9, Mainz 55128, Germany


GdPdX compounds (X = Al, Si, Ga, Ge, In, Sn) crystallized in the stable orthorhombic structures similar to GdRhAl. GdPdAl crystallized in TiNiSi type, GdPdSi in β - GdPdSi type, GdPdGe in β - GdPdGe type and GdPdGa, GdPdSn GdPdIn in Co2Si type. The crystal structure of GdPdX strongly depends on the history of the sample. These samples were rapidly cooled and crystallized mostly in disordered crystal structures. The electronic structure measurements revealed the narrowing of the Pd 4d states in the compounds. Position of these states for all compounds is similar, about 4 eV below the Fermi level. However, the changes of full width at half maximum were clearly visible. A comparison between reduced resistivity and the resistivity resulting from the Bloch formula in the temperature range above the ordering point is performed. The agreement between theory and experiment is quite satisfactory. Some deviation is observed for the samples with indium and germanium.


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Presentation: poster at E-MRS Fall Meeting 2005, Symposium B, by Ewa Talik
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-11 07:50
Revised:   2009-06-07 00:44